Study of the spontaneous nucleation of 3C-SiC single crystals using CF-PVT technique

I.G. Galben-Sandulache (1) , G.L. Sun (1) , J.M. Dedulle , T. Ouisse (1) , R. Madar (1) , M. Pons (2) , D. Chaussende (1)

1 LMGP - Laboratoire des matériaux et du génie physique
2 SIMaP - Science et Ingénierie des Matériaux et Procédés

The control of the nucleation step is a critical issue for a future development of 3C-SiC bulk growth. The possibility to get very high quality 3C-SiC single crystal through self-nucleation on graphite was already demonstrated but the large number of nuclei limits the growth of only one crystal. In this study, we have investigated different configurations that help improving the nucleation step. For that, the "necking" stage, well established in Bridgman or Czochralski growth processes, has been successfully applied to the growth of 3C-SiC with the CF-PVT technique. This has allowed getting only one 3C-SiC crystal. The enlarged parts, after having passed the neck, are of high structural quality.

Domaines: Matériaux

I.G. Galben-Sandulache, G.L. Sun, J.M. Dedulle, T. Ouisse, R. Madar, et al.. Study of the spontaneous nucleation of 3C-SiC single crystals using CF-PVT technique. 13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg, Germany. pp.55-58, ⟨10.4028/www.scientific.net/MSF.645-648.55⟩. ⟨hal-00517395⟩