A SiGe:C BiCMOS LNA for 94GHz band applications

Raffaele Severino (1) , Thierry Taris (1) , Yann Deval (1) , Didier Belot (2) , Jean-Baptiste Begueret (1)

1 IMS - Laboratoire de l'intégration, du matériau au système
2 ST-CROLLES - STMicroelectronics [Crolles]

A new low noise amplifier (LNA) dedicated to 94GHz band has been implemented in a 130nm BiCMOS technology intended for millimeter waves applications. The circuit is a single stage cascode amplifier utilizing transmission lines and MIM capacitors for input, output and inter-stage matching. On chip measurements show a 9.08dB maximum peak of power gain at 94.7GHz and a 1dB compression point at -14.9dBm of input power. The noise figure is 8.6dB and the power consumption is 13mW.

Domaines: Electronique

Raffaele Severino, Thierry Taris, Yann Deval, Didier Belot, Jean-Baptiste Begueret. A SiGe:C BiCMOS LNA for 94GHz band applications. IEEE Bipolar/ BiCMOS Circuits and Technology Meeting 2010, Oct 2010, Austin, United States. pp.304-308. ⟨hal-00517064⟩