Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µm

Estelle Homeyer (1) , Rozenn Piron (1) , Philippe Caroff (1) , Cyril Paranthoen (1) , Olivier Dehaese (1) , Alain Le Corre (1) , Slimane Loualiche (1)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON

This paper presents the temperature dependent characteristics of a semiconductor laser with a single quantum dot (QD) layer on InP(311)B substrate. The laser emits in the optical telecommunication wavelength band near 1.55 µm and shows a threshold current density of 6 A/cm2 at low temperature, attesting excellent material quality. Laser spectra obtained under electrical injection for different temperatures show a drastic influence on their shape. A large spectral broadening is observed at low temperature, while it dramatically narrows close to room temperature. This is due to homogeneous broadening of each QD with increasing temperature, favouring a collective emission of the QDs and homogeneous gain.

Domaines: Optique / photonique

Estelle Homeyer, Rozenn Piron, Philippe Caroff, Cyril Paranthoen, Olivier Dehaese, et al.. Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µm. 32nd International Symposium on Compound Semiconductors, Sep 2005, Rust, Germany. pp.407-10, ⟨10.1002/pssc.200564151⟩. ⟨hal-00491820⟩