Negative characteristic temperature of long wavelength InAs/AlGaInAs quantum dot lasers grown on InP substrates

Ibrahim Alghoraibi (1) , Tony Rohel (1) , Rozenn Piron (1) , Nicolas Bertru (1) , Cyril Paranthoën (1) , Georges Elias (1) , Abdulhadi Nakkar (1) , Hervé Folliot (1) , Alain Le Corre (1) , Slimane Loualiche (1)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON

InAs quantum dot lasers grown on (311)B InP substrates with AlGaInAs barriers have been fabricated and studied. A large decrease of the threshold current with temperature was observed from 110 to 140 K. In the same temperature range, electroluminescence spectra showed a shape change, an energy shift with temperature, which cannot be fitted with a Varshni law, and a large decrease of the laser linewidth. These results can be related to a delayed thermalisation of carriers within quantum dot ensemble.

Domaines: Optique / photonique

Ibrahim Alghoraibi, Tony Rohel, Rozenn Piron, Nicolas Bertru, Cyril Paranthoën, et al.. Negative characteristic temperature of long wavelength InAs/AlGaInAs quantum dot lasers grown on InP substrates. Applied Physics Letters, 2007, 91, pp.261105. ⟨10.1063/1.2827177⟩. ⟨hal-00485705⟩