Optimized Pad Design for Millimeter-Wave Applications with a 65nm CMOS RF Technology

Abstract : Millimeter-wave pads based on a 65nm CMOS technology from STMicroelectronics have been designed and measured. A pad was optimized to minimize losses caused by a ground shield and by the conductive substrate. Modelling techniques and special cares to design a millimeter pad with a minimum of effects are highlighted. The goal is to integrate this pad in active devices such as a power amplifier (PA) or a low noise amplifier (LNA). The frequency response shows that the intrinsic capacitance of an optimum pad does not exceed 17fF at 60GHz. The aimed application is the unlicensed band around 60GHz suitable for Wireless Personal Area Network application (WPAN).
Complete list of metadatas

https://hal.archives-ouvertes.fr/hal-00480600
Contributor : Sofiane Aloui <>
Submitted on : Tuesday, May 4, 2010 - 3:28:06 PM
Last modification on : Saturday, October 26, 2019 - 1:32:12 AM

Identifiers

Citation

Sofiane Aloui, Eric Kerherve, Jean-Baptiste Begueret, Robert Plana, Didier Belot. Optimized Pad Design for Millimeter-Wave Applications with a 65nm CMOS RF Technology. European Microwave Conference, Sep 2009, Rome, Italy. pp.1187-1190, ⟨10.1109/EUMC.2009.5296320⟩. ⟨hal-00480600⟩

Share

Metrics

Record views

192