Analysis of the C-V characteristic in SiO2/GaN MOS capacitors

I. Cortes , E. Al-Alam , Marie-Paule Besland (1) , P. Regreny , Frédéric Morancho , A. Cazarre , Y. Cordier (2) , Antoine Goullet (1) , Karine Isoird

1 IMN - Institut des Matériaux Jean Rouxel
2 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications

In this work, C-V characteristics of MOS capacitors fabricated by depositing SiO2 by plasma-enhanced chemical-vapor-deposition at low temperature (300 degrees C) on an N-type GaN epitaxial layer have been performed to analyze the quality and reliability of the resultant MOS device. Additional information has been extracted by comparing the small-signal simulations of equivalent MOS 2D structures with the C-V experimental results.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

I. Cortes, E. Al-Alam, Marie-Paule Besland, P. Regreny, Frédéric Morancho, et al.. Analysis of the C-V characteristic in SiO2/GaN MOS capacitors. 7th Spanish Conference on Electron Devices, Feb 2009, Santiago de Compostela, Spain. pp.254. ⟨hal-00475900⟩