Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

N. Reckinger (1) , X.H. Tang (1) , V. Bayot (1) , Dmitri Yarekha (2) , S. Godey (2) , Emmanuel Dubois (2) , X. Wallart (2) , G. Larrieu (2) , A. Laszcz , J. Ratajczak , P.J. Jacques (1) , J.P. Raskin (1)

1 UCL - Université Catholique de Louvain = Catholic University of Louvain
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to decrease substantially from 0.43 eV for as-deposited samples to reach its lowest value, 0.28 eV, at 450°C. By x-ray diffraction, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy, the decrease of the SBH is shown to be associated to the progressive formation of crystalline ErSi2-x

Domaines: Micro et nanotechnologies/Microélectronique

N. Reckinger, X.H. Tang, V. Bayot, Dmitri Yarekha, S. Godey, et al.. Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing. Applied Physics Letters, 2009, 94 (19), pp.191913. ⟨10.1063/1.3136849⟩. ⟨hal-00471985⟩