Atomic scale flattening, step formation and graphitization blocking on 6H-and 4H-SiC{0001} surfaces under Si flux

F.J. Ferrer , E. Moreau , D. Vignaud , S. Godey , X. Wallart (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

F.J. Ferrer, E. Moreau, D. Vignaud, S. Godey, X. Wallart. Atomic scale flattening, step formation and graphitization blocking on 6H-and 4H-SiC{0001} surfaces under Si flux. Semiconductor Science and Technology, 2009, 24, pp.125014-1-4. ⟨10.1088/0268-1242/24/12/125014⟩. ⟨hal-00471909⟩