New high temperature modification of CeTiGe : structural characterization and physical properties
Résumé
The new high temperature form (HT) of the ternary germanide CeTiGe was prepared by annealing at 1373 K. The investigation of HT-CeTiGe by x-ray powder diffraction shows that the compound crystallizes in the tetragonal CeScSi type structure (space group I4/mmm; a = 414.95(2) and c = 1590.85(10) pm as unit cell parameters). Electrical resistivity, thermoelectric power, magnetization and specific heat measurements performed down to 2 K on HT-CeTiGe reveal a non-magnetic strongly correlated electron system; the specific heat divided by temperature attains a value of 0.635 J mol − 1 K − 2 at 2 K. The comparison of the physical properties of the two crystallographic modifications of CeTiGe suggests a decrease of the hybridization Jcf between 4f(Ce) and conduction electrons in the sequence LT-CeTiGe...