A New Technique to Extract the Source/Drain Series Resistance of MOSFETs

Dominique Fleury (1, 2) , Antoine Cros (2) , Grégory Bidal (1, 2) , Julien Rosa (2) , Gérard Ghibaudo (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 ST-CROLLES - STMicroelectronics [Crolles]

This letter demonstrates a new technique to extract the source/drain series resistance of MOSFETs. Unlike the well-known total resistance techniques, R sd is extracted in a way that the result is insensitive to effective length and mobility variations. The technique has been successfully applied to 45-nm bulk and fully depleted SOI MOSFETs with high-¿ and metal gate, having channel length down to 22 nm. The technique provides a high accuracy and allows fast measurements and statistical analysis.

Mots clés: MOSFET; Series Resistance; Extraction technique; measurements

Domaines: Micro et nanotechnologies/Microélectronique

Dominique Fleury, Antoine Cros, Grégory Bidal, Julien Rosa, Gérard Ghibaudo. A New Technique to Extract the Source/Drain Series Resistance of MOSFETs. IEEE Electron Device Letters, 2009, 30 (9), pp.975 - 977. ⟨10.1109/LED.2009.2026592⟩. ⟨hal-00465767⟩