Growth and electrical properties of N,N'-Bis(n-pentyl)terrylene-3,4:11,12-tetracarboximide thin films

Matthieu Petit (1) , R. Hayakawa , Y. Shirai , Y. Wakayama , J.P. Hill , K. Ariga , T. Chikyow

1 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille

A n-type semiconductor molecule N , N ⬘ -bis n-pentyl terrylene-3,4:11,12-tetracarboximide (TTCDI-5C) was synthesized. Theoretical calculations predict several advantages in electrical properties, including large adiabatic electron affinity and small reorganization energy. The molecule was deposited on SiO 2 surfaces and the structure of the resultant thin film was studied. Grain size and thin film crystallinity improve as the temperature increases. Top-contact organic field effect transistors (OFETs) using TTCDI-5C as the semiconductor layer were fabricated using SiO 2 as the gate dielectric. Values of charge carrier mobility up to 7.24⫻ 10 −2 cm 2 V −1 s −1 and current on/off ratios higher than 10 4 were obtained, demonstrating the potential of TTCD-5C for use in OFETs.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Electronique

Matthieu Petit, R. Hayakawa, Y. Shirai, Y. Wakayama, J.P. Hill, et al.. Growth and electrical properties of N,N'-Bis(n-pentyl)terrylene-3,4:11,12-tetracarboximide thin films. Applied Physics Letters, 2008, 92, pp.163301. ⟨10.1063/1.2907689⟩. ⟨hal-00447723⟩