A robust passivation-enhanced cryogenic process used for deep silicon etching

Laurianne E. Pichon (1) , El-Houcine Oubensaid (1) , Corinne Y. Duluard (1) , Remi Dussart (1) , Philippe Lefaucheux (1) , Mohamed Boufnichel (2) , Pierre Ranson (1) , Lawrence J. Overzet (3)

1 GREMI - Groupe de recherches sur l'énergétique des milieux ionisés
2 ST-CROLLES - STMicroelectronics [Crolles]
3 PAL - Plasma Application Laboratory

Domaines: Physique des plasmas [physics.plasm-ph]

Laurianne E. Pichon, El-Houcine Oubensaid, Corinne Y. Duluard, Remi Dussart, Philippe Lefaucheux, et al.. A robust passivation-enhanced cryogenic process used for deep silicon etching. AVS 54th International Symposium & Exhibition, Oct 2007, Seattle, United States. ⟨hal-00444264⟩