Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)

Y. Cordier , A. Lecotonnec , Sébastien Chenot , N. Baron , F. Nacer , Antoine Goullet (1) , H. Lhermite , M. El Kazzi , P. Regreny , G. Hollinger , Marie-Paule Besland (1)

1 IMN - Institut des Matériaux Jean Rouxel

In this work, AlGaN/GaN HEMT structures grown on Si(111) substrates were covered with SiNx dielectric films, in order to realize MIS-HEMT devices. The dielectric films have been deposited by plasma enhanced chemical vapor deposition using deposition conditions previously optimized for InP based devices. X-ray photoelectron spectroscopy was used to control the interface formation and characterize the deposited films. Capacitance-voltage, Hall effect and currentvoltage measurements were carried out on the MIS-HEMTs and HEMT reference devices and correlated with the dielectric layer quality.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Y. Cordier, A. Lecotonnec, Sébastien Chenot, N. Baron, F. Nacer, et al.. Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111). physica status solidi (c), 2009, 6 (2), pp.1016. ⟨10.1002/pssc.200880870⟩. ⟨hal-00433241⟩