193 nm photolithographic properties of chemically amplified photoresists with well-defined molecular structures - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2009
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hal-00411887 , version 1 (31-08-2009)

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  • HAL Id : hal-00411887 , version 1

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Hassam Ridaoui, Ali Dirani, Olivier Soppera, I. Ismailova, Cyril Brochon, et al.. 193 nm photolithographic properties of chemically amplified photoresists with well-defined molecular structures. 26th InternationalConference of Photopolymer Science and Technology, Jun 2009, CHIBA, Japan. ⟨hal-00411887⟩
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