Modelling of phosphorus diffusion in Ge accounting for the triply negatively charged vacancy

T. Canneaux; D. Mathiot; J.P. Ponpon; Y. Leroy

Conference Papers Year : 2010

Modelling of phosphorus diffusion in Ge accounting for the triply negatively charged vacancy

(1) , (1) , (1) , (1)

1

T. Canneaux

Function : Author

Institut d'Electronique du Solide et des Systèmes

D. Mathiot

Function : Author

Institut d'Electronique du Solide et des Systèmes

J.P. Ponpon

Function : Author

Institut d'Electronique du Solide et des Systèmes

Y. Leroy

Function : Author

Institut d'Electronique du Solide et des Systèmes

Marie-Anne Jung : Connect in order to contact the contributor

https://hal.science/hal-00408930

Submitted on : Tuesday, August 4, 2009-2:49:17 PM

Last modification on : Friday, March 24, 2023-2:52:52 PM

Dates and versions

hal-00408930 , version 1 (04-08-2009)

Identifiers

HAL Id : hal-00408930 , version 1

Cite

T. Canneaux, D. Mathiot, J.P. Ponpon, Y. Leroy. Modelling of phosphorus diffusion in Ge accounting for the triply negatively charged vacancy. European Material Research Society (E-MRS) Spring Conference, Symposium on Silicon and Germanium issues for future CMOS devices, Jun 2009, STRASBOURG, France. pp.2394-2397. ⟨hal-00408930⟩

Modelling of phosphorus diffusion in Ge accounting for the triply negatively charged vacancy

Dates and versions

Identifiers

Cite

Export

Collections

Share