Fabrication and electrical characterization of silicon nanowires based resistors

Liang Ni (1) , Fouad Demami (1) , Régis Rogel (2) , Anne-Claire Salaün (2) , Laurent Pichon (2)

1 IETR - Institut d'Electronique et de Télécommunications de Rennes
2 IETR - Institut d'Électronique et des Technologies du numéRique

Silicon nanowires (SiNWs) are synthesized via the Vapor-Liquid-Solid (VLS) mechanism using gold (Au) as metal catalyst and silane (SiH4) as precursor gas. Au nanoparticles are employed as liquid droplets catalysis during the SiNWs growth performed in a hot wall LPCVD reactor at 480°C and 40 Pa. SiNWs local synthesis at micron scale is demonstrated using classical optical photolithography process. SiNWs grow with high density anchored at the dedicated catalyst islands. This resulting network is used to interconnect two heavily doped polysilicon interdigitated electrodes leading to the formation of electrical resistors in a coplanar structure. Current-voltage (I-V) characteristics highlight a symmetric shape. The temperature dependence of the electrical resistance is activated, with activation energy of 0.47 eV at temperatures greater than 300K.

Domaines: Micro et nanotechnologies/Microélectronique

Liang Ni, Fouad Demami, Régis Rogel, Anne-Claire Salaün, Laurent Pichon. Fabrication and electrical characterization of silicon nanowires based resistors. EMRS Strasbourg, Jun 2009, France. ⟨hal-00402620⟩