In situ post etch treatment as solution to improve defect density for porous Low-k integration using metallic hard mask

N. Posseme (1) , R. Bouyssou (1) , T. Chevolleau (1) , T. David , V. Arnal , S. Chhun , C. Monget , E. Richard , D. Galpin , J. Guillan (2) , L. Arnaud , Daniel Roy , L. Clément , M. Guillermet , J. Ramard , O. Joubert (1) , C. Vérove

1 LTM - Laboratoire des technologies de la microélectronique
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

N. Posseme, R. Bouyssou, T. Chevolleau, T. David, V. Arnal, et al.. In situ post etch treatment as solution to improve defect density for porous Low-k integration using metallic hard mask. IITC, Interconnect Technology Conference,, 2009, saporo, Japan. ⟨hal-00399803⟩