Parallel angle resolved XPS investigations on 12 inch wafers for the study of W and WSix oxidation in air - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Microelectronic Engineering Année : 2008

Parallel angle resolved XPS investigations on 12 inch wafers for the study of W and WSix oxidation in air

Fichier non déposé

Dates et versions

hal-00397111 , version 1 (19-06-2009)

Identifiants

  • HAL Id : hal-00397111 , version 1

Citer

B. Pelissier, A. Beaurain, R. Gassilloud, J.P. Barnes, F. Martin, et al.. Parallel angle resolved XPS investigations on 12 inch wafers for the study of W and WSix oxidation in air. Microelectronic Engineering, 2008, pp.85 (2008) 1882-1887. ⟨hal-00397111⟩
30 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More