Impact of Progressive Soft Oxide Breakdown on MOS Parameters: Experiment and Modelling.

L. Gerrer; G. Ribes; G. Ghibaudo; J. Jomaah

Conference Papers Year : 2008

Impact of Progressive Soft Oxide Breakdown on MOS Parameters: Experiment and Modelling.

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1

L. Gerrer

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G. Ribes

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G. Ghibaudo

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PersonId : 170596
IdHAL : gerard-ghibaudo
ORCID : 0000-0001-9901-0679
IdRef : 069253099

Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

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J. Jomaah

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Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

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Micro and nanotechnologies/Microelectronics

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Submitted on : Monday, June 8, 2009-10:58:58 AM

Last modification on : Thursday, April 4, 2024-8:49:56 PM

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hal-00392468 , version 1 (08-06-2009)

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HAL Id : hal-00392468 , version 1

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L. Gerrer, G. Ribes, G. Ghibaudo, J. Jomaah. Impact of Progressive Soft Oxide Breakdown on MOS Parameters: Experiment and Modelling.. 15th Workshop on Dielectrics in Microelectronics, Berlin, Germany, Jun 2008, Berlin, Germany. ⟨hal-00392468⟩

Impact of Progressive Soft Oxide Breakdown on MOS Parameters: Experiment and Modelling.

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