Optical, structural investigations and band-gap bowing parameter of GaInN alloys

Matthieu Moret (1) , Bernard Gil (1) , Sandra Ruffenach (1) , Olivier Briot (1) , Christoph Giesen , Michael Heuken , Simon Rushworth , T. Leese , Marco Succi

1 GES - Groupe d'étude des semiconducteurs

We have performed a detailed investigation of the photoluminescence features taken at 2 K on a series of GaxIn1-xN alloys grown by metal-organic vapour-phase epitaxy through the whole composition range. The evolution of the photoluminescence lineshape of GaInN alloys in the indium-rich region is dominated by doping effects rather than by band-gap tailing effects correlated to existence of random chemical crystal inhomogeneities. The lineshape of the photoluminescence indicates a residual electron concentration of about 1018–1019cm-3 in the bulk part of the epilayers. The value we get for the bowing parameter is b=2.8 eV.

Mots clés: Band Gap; Bowing Parameter; MOCVD; InGaN

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Matthieu Moret, Bernard Gil, Sandra Ruffenach, Olivier Briot, Christoph Giesen, et al.. Optical, structural investigations and band-gap bowing parameter of GaInN alloys. 2nd International Symposium on Growth of III-Nitride (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2795, ⟨10.1016/j.jcrysgro.2009.01.009⟩. ⟨hal-00390296⟩