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New lateral DMOS and IGBT structures realized on a partial SOI substrate based on LEGO process

Abstract : In this paper, we present new lateral DMOS and IGBT structures based on a partial SOI substrate. The partial SOI substrate, formed through LEGO recrystallization process improves considerably the breakdown capability and the thermal behavior of these devices compared to full SOI devices. Experimental results of high voltage power devices implemented on such a process are presented for the first time.
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https://hal.archives-ouvertes.fr/hal-00385958
Contributor : Marise Bafleur <>
Submitted on : Wednesday, May 20, 2009 - 2:27:54 PM
Last modification on : Thursday, June 10, 2021 - 3:07:01 AM
Long-term archiving on: : Thursday, June 10, 2010 - 11:28:53 PM

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  • HAL Id : hal-00385958, version 1

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Isabelle Bertrand, Vasanta Pathirana, Éric Imbernon, Florin Udrea, Marise Bafleur, et al.. New lateral DMOS and IGBT structures realized on a partial SOI substrate based on LEGO process. Bipolar/BiCMOS Circuits and Technology Meeting (BCTM2005), Oct 2005, Santa Barbara, United States. pp.74-77. ⟨hal-00385958⟩

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