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Identification of the physical signatures of CDM induced latent defects into a DC-DC converter using low frequency noise measurements

Yuan Gao 1 Nicolas Guitard 2 Christophe Salamero 2 Marise Bafleur 2, * Laurent Bary 3 Laurent Escotte 4 Patrick Gueulle 1 Lionel Lescouzères 1
* Corresponding author
2 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
LAAS - Laboratoire d'analyse et d'architecture des systèmes
3 LAAS-II
LAAS - Laboratoire d'analyse et d'architecture des systèmes
4 LAAS-MOST - Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : In this paper, it is demonstrated that low frequency noise measurements are an efficient tool for the detection of latent defects induced by CDM stress in a complex circuit such as a DC-DC converter. This technique is able to detect the presence of a defect whereas classical electrical testing techniques such as Iddq or functionality test fail. In addition, a correlation between the noise signature and the nature of the defect is established. In particular, the presence of trapped charges in the oxides is clearly identified.
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https://hal.archives-ouvertes.fr/hal-00385697
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Submitted on : Wednesday, May 20, 2009 - 2:33:23 PM
Last modification on : Tuesday, October 19, 2021 - 11:18:07 PM
Long-term archiving on: : Thursday, June 10, 2010 - 8:38:10 PM

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  • HAL Id : hal-00385697, version 1

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Yuan Gao, Nicolas Guitard, Christophe Salamero, Marise Bafleur, Laurent Bary, et al.. Identification of the physical signatures of CDM induced latent defects into a DC-DC converter using low frequency noise measurements. Microelectronics Reliability, Elsevier, 2007, 47 (9-11), pp.1456-1461. ⟨hal-00385697⟩

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