Strain relief guided novel growth of atomic nanowires in a Cu3N-Cu(110) molecular network

X. D. Ma 1 D. I. Bazhanov 1 Olivier Fruchart 2 F. Yildiz 1 T. Yokoyama 3 M. Przybylski 1 V. S. Stepanyuk 1 W. Hergert 4 J. Kirschner 1
1 MPI-HALLE - Max-Planck-Institut für Mikrostrukturphysik
2 MNM - Micro et NanoMagnétisme
NEEL - Institut Néel
3 Institute for Molecular Science
4 MLU - Martin-Luther-Universität Halle Wittenberg
Abstract : A self-corrugated Cu3N-Cu(110) molecular network shows potential to overcome the element dependence barrier as demonstrated by epitaxial growth of atomic nanowires (1 nm in width) among various 3d, 4d, and 5d elements. Scanning tunnelling microscopy (STM) shows that all of the investigated atomic nanowires share an identical structure, featuring uniform width, height, orientation and same minimum separation distance. Ab initio study reveals that the formation mechanism of atomic nanowires can be directly attributed to a strain relief guided asymmetric occupation of atoms on the originally symmetric crest zone of the corrugated network.
Document type :
Journal articles
Complete list of metadatas

Cited literature [14 references]  Display  Hide  Download
https://hal.archives-ouvertes.fr/hal-00378769
Contributor : Olivier Fruchart <>
Submitted on : Monday, April 27, 2009 - 8:45:36 AM
Last modification on : Wednesday, February 13, 2019 - 10:06:05 AM
Long-term archiving on : Thursday, June 10, 2010 - 9:54:23 PM

File

Manuscript-final.pdf
Files produced by the author(s)

Identifiers

Collections

NEEL | UGA

Citation

X. D. Ma, D. I. Bazhanov, Olivier Fruchart, F. Yildiz, T. Yokoyama, et al.. Strain relief guided novel growth of atomic nanowires in a Cu3N-Cu(110) molecular network. Physical Review Letters, American Physical Society, 2009, 102, pp.205503. ⟨10.1103/PhysRevLett.102.205503⟩. ⟨hal-00378769⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

230

Files downloads

148

Contact

support.ccsd.cnrs.fr
hal.support@ccsd.cnrs.fr
Logo CCSD