Effect of fluoride plasma treatment on InAlN/GaN HEMTs

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https://hal.archives-ouvertes.fr/hal-00357798
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Submitted on : Monday, February 2, 2009 - 9:03:28 AM
Last modification on : Friday, October 25, 2019 - 2:34:04 PM

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F. Medjdoub, M. Alomari, J.F. Carlin, M. Gonschorek, E. Feltin, et al.. Effect of fluoride plasma treatment on InAlN/GaN HEMTs. Electronics Letters, IET, 2008, 44, pp.696-698. ⟨10.1049/el:20080864⟩. ⟨hal-00357798⟩

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