Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44-360 nm : photoemission assessments

A. Benmoussa (1) , Jean-François Hochedez (1) , R. Dahal (2) , J. Li (2) , J.Y. Lin (2) , H.X. Jiang (2) , A. Soltani (3) , Jean-Claude de Jaeger (3) , U. Kroth (4) , M. Richter (4)

1 ROB - Royal Observatory of Belgium = Observatoire Royal de Belgique
2 Department of Physics [Kansas]
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
4 PTB - Physikalisch-Technische Bundesanstalt [Berlin]

Domaines: Instrumentation et méthodes pour l'astrophysique [astro-ph.IM]

A. Benmoussa, Jean-François Hochedez, R. Dahal, J. Li, J.Y. Lin, et al.. Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44-360 nm : photoemission assessments. Applied Physics Letters, 2008, 92, pp.022108 (1-3). ⟨10.1063/1.2834701⟩. ⟨hal-00357794⟩