In-Plane Bistable Nanowire For Memory Devices

B. Charlot (1) , W. Sun (2) , K. Yamashita (2) , H. Fujita (2) , H. Toshiyoshi (2)

1 TIMA - Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés
2 IIS

We present a nanomechanical device design to be used in a non-volatile mechanical memory point. The structure is composed of a suspended slender nanowire (width : 100nm, thickness 430nm length : 8 to 30µm) clamped at its both ends. Electrodes are placed on each sides of the nanowire and are used to actuate the structure (writing, erasing) and to measure the position through a capactive bridge (reading). The structure is patterned by electron beam lithography on a pre-stressed thermally grown silicon dioxide layer. When later released, the stressed material relaxes and the beam buckles in a position of lower energy. Such symmetric beams, called Euler beams, show two stable deformed positions thus form a bistable structure. This paper will present the fabrication, simulation and mechanical and electrical actuation of an in plane bistable nanowire. Final paper will include a section on FEM simulations.

Domaines: Autre [cs.OH]

B. Charlot, W. Sun, K. Yamashita, H. Fujita, H. Toshiyoshi. In-Plane Bistable Nanowire For Memory Devices. DTIP 2008, Apr 2008, Nice, France. pp.254-258. ⟨hal-00277719⟩