Electroluminescence of excitons in an InGaAs quantum well

Daniele Bajoni (1) , Sophie Bouchoule (1) , Aristide Lemaitre (1) , Audrey Miard (1) , Jérôme Tignon (2) , Jacqueline Bloch (1)

1 LPN - Laboratoire de photonique et de nanostructures
2 LPA - Laboratoire Pierre Aigrain

We report on electrical injection of excitons in a quantum well placed in the intrinsic region of a p-i-n photodiode. Both the narrow linewidth of the electroluminescence at 70 K and the evolution of the emission spectra with increasing current are signatures of the excitonic character of the emission. This structure is ready to be integrated in semiconductor microcavities in order to evidence the strong coupling regime under electrical injection. (c) 2007 Elsevier Ltd. All rights reserved.

Domaines: Autre [cond-mat.other]

Daniele Bajoni, Sophie Bouchoule, Aristide Lemaitre, Audrey Miard, Jérôme Tignon, et al.. Electroluminescence of excitons in an InGaAs quantum well. Superlattices and Microstructures, 2007, 41 (5-6), pp.368. ⟨hal-00276074⟩