THERMAL IMAGING OF Si, GaAs AND GaN -BASED DEVICES WITHIN THE MICROTHERM PROJECT

Abstract : Within the european project Microtherm, we have developed a CCD-based thermoreflectance system which delivers thermal images of working integrated circuits with high spatial and thermal resolutions (down to 350 nm and 0.1 K respectively). We illustrate the performances of this set-up on several classes of semiconductor devices including high power transistors and transistor arrays in silicon, gallium arsenide and gallium nitride technologies.
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  • HAL Id : hal-00189477, version 1

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S. Pavageau, G. Tessier, C. Filloy, G. Jerosolimski, D. Fournier, et al.. THERMAL IMAGING OF Si, GaAs AND GaN -BASED DEVICES WITHIN THE MICROTHERM PROJECT. THERMINIC 2005, Sep 2005, Belgirate, Lago Maggiore, Italy. pp.224-228. ⟨hal-00189477⟩

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