Study of 3C-SiC nucleation on (0 0 0 1) 6H-SiC nominal surfaces by the CF-PVT method

Laurence Latu-Romain (1, 2) , Didier Chaussende (1) , Patrick Chaudouët (1) , Florence Robaut (3) , Gregory Berthomé (2) , Michel Pons (2) , Roland Madar (1)

1 LMGP - Laboratoire des matériaux et du génie physique
2 LTPCM - Laboratoire de thermodynamique et physico-chimie métallurgiques
3 CMTC - Consortium des Moyens Technologiques Communs

3C-SiC nucleation on (0 0 0 1) 6H-SiC nominal surfaces was investigated during the heating-up step of the continuous feed-physical vapour transport (CF-PVT) growth technique. We focused on the heteropolytypic 6H-3C transition under silicon-rich gas phase for temperatures from 1800 to 2000 °C. Seed polarity effects were studied. The 3C proportion reached a maximum for a well-defined temperature which was higher on the C face than on the Si face. The 2D nucleation threshold for the 3C polytype was around 1825 °C on the Si face. 3C formation was closely connected to the surface morphology, i.e. to the development of facets (on-axis regions) on the Si face.

Mots clés: A1. Nucleation; A1. Morphological stability; A2. Growth from vapour; B2. Semiconducting silicon compounds

Domaines: Matériaux

Laurence Latu-Romain, Didier Chaussende, Patrick Chaudouët, Florence Robaut, Gregory Berthomé, et al.. Study of 3C-SiC nucleation on (0 0 0 1) 6H-SiC nominal surfaces by the CF-PVT method. Journal of Crystal Growth, 2005, 275, pp.e609-e613. ⟨10.1016/j.jcrysgro.2004.11.005⟩. ⟨hal-00188007⟩