Hydrogenation of the ternary compounds CeNiX (X=Al, Ga, In, Si, Ge and Sn): influence on the valence state of cerium - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Alloys and Compounds Année : 2004

Hydrogenation of the ternary compounds CeNiX (X=Al, Ga, In, Si, Ge and Sn): influence on the valence state of cerium

Résumé

The hydrogenation process of the intermediate valence compounds CeNiAl, CeNiGa, CeNiIn, CeNiSi and CeNiGe and of the Kondo semiconductor stannide CeNiSn has been investigated. Magnetization and electrical resistivity measurements reveal interesting physical transition induced by the insertion of hydrogen : ....

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Matériaux

Dates et versions

hal-00153139 , version 1 (08-06-2007)

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Bernard Chevalier, Mathieu Pasturel, Jean-Louis Bobet, Rodolphe Decourt, Jean Etourneau, et al.. Hydrogenation of the ternary compounds CeNiX (X=Al, Ga, In, Si, Ge and Sn): influence on the valence state of cerium. Journal of Alloys and Compounds, 2004, 383 (1-2), pp.4-9. ⟨10.1016/j.jallcom.2004.04.006⟩. ⟨hal-00153139⟩

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