High Temperature Silicon Carbide Chemical Vapor deposition processes: from pure thermodynamic to Mass transport modeling

E. Blanquet (1) , D. Chaussende (2) , S. Nishizawa (3) , M. Pons (1)

1 LTPCM - Laboratoire de thermodynamique et physico-chimie métallurgiques
2 LMGP - Laboratoire des matériaux et du génie physique
3 AIST - National Institute of Advanced Industrial Science and Technology

Domaines: Matériaux; Génie des procédés

E. Blanquet, D. Chaussende, S. Nishizawa, M. Pons. High Temperature Silicon Carbide Chemical Vapor deposition processes: from pure thermodynamic to Mass transport modeling. European conference on Computational Dynamics, Symposium, Sep 2006, Egmondaan Zee, Netherlands. pp.1-20. ⟨hal-00141097⟩