Single-domain 3C-SiC epitaxially grown on 6H-SiC by the VLS mechanism

M. Soueidan , G. Ferro , J. Stoemenos , E. K. Polychroniadis , D. Chaussende , F. Soares , Sandrine Juillaguet (1) , Jean Camassel (1) , Y. Monteil

1 GES - Groupe d'étude des semiconducteurs

Using the Vapor-Liquid-Solid mechanism in Ge-Si melts we have grown 3C-SiC layers on top of <0001>-oriented, Si face, 6H-SiC substrates. The surface morphology was free of spiral growth but highly step bunched. The 3C-SiC polytype was identified by micro-Raman spectroscopy and confirmed by low temperature photoluminescence. Electron backscattering diffraction mapping showed that the upper side of the layers is single-domain, i.e. that the 3C-SiC material displays only one in-plane orientation. Cross-sectional and plane-view TEM investigations allowed detection of double positioning boundaries but only confined at the substrate/epilayer interface. The main additional defects found were stacking faults (SF) with a density of similar to 4.10(3) cm(-1). Forming at the interface, they propagate through the epitaxial layer.

Mots clés: 3C-SiC; single-domain; heteroepitaxy; 6H-SiC; VLS; Ge

Domaines: Matériaux; Science des matériaux [cond-mat.mtrl-sci]

M. Soueidan, G. Ferro, J. Stoemenos, E. K. Polychroniadis, D. Chaussende, et al.. Single-domain 3C-SiC epitaxially grown on 6H-SiC by the VLS mechanism. International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.287-290. ⟨hal-00140124⟩