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Characterization of a capacitively coupled RF plasma for SiO2 deposition: numerical and experimental results

Abstract : A fluid model including an electron beam of hot electrons is presented and used to describe the transport of charged particles in a 13.56-MHz O2 plasma. An increase in the electron density when the RF power increases is observed from Langmuir probe measurements. The calculated evolution of the electron number density shows a reasonable agreement if the secondary emission coefficient is chosen equal to 10−4 on a steel (316L) electrode. The values of the plasma potential increase with increasing RF power from 30 to 35 V at 0.5–0.6 Torr, in the range 100–300 W. Surprisingly, the electron temperature decreases with increasing applied RF power. No clear explanation for this behavior is available yet.
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https://hal.archives-ouvertes.fr/hal-00123453
Contributor : Valerie Tamburini <>
Submitted on : Tuesday, January 9, 2007 - 4:14:24 PM
Last modification on : Thursday, February 25, 2021 - 1:08:01 PM

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Thierry Belmonte, Gérard Henrion, M. Goujon. Characterization of a capacitively coupled RF plasma for SiO2 deposition: numerical and experimental results. Thin Solid Films, Elsevier, 2005, Volume 475, Issues 1-2, pp.118-123. ⟨10.1016/j.tsf.2004.07.027⟩. ⟨hal-00123453⟩

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