Thermodynamic aspects of the growth of SiC single crystals using the CF-PVT process

Didier Chaussende (1) , Elisabeth Blanquet (2) , Francis Baillet (2) , Magali Ucar (2, 3) , Guy Chichignoud (2)

1 LMGP - Laboratoire des matériaux et du génie physique
2 LTPCM - Laboratoire de thermodynamique et physico-chimie métallurgiques
3 NOVASiC

We investigated experimentally together with thermodynamic and Computation Fluid Dynamics calculations, the main trends which govern the Continuous Feed-Physical Vapour Transport bulk crystal growth process. Several chemical systems were considered. An analysis of the chemistry of every successive step: Chemical Vapour Deposition (CVD), transfer and Physical Vapour Transport (PVT) is, first, presented. The effects of hydrogen and chlorine are investigated. Next, the interaction between the different steps is discussed. We demonstrate that the strong chemical interaction which exists between both the CVD and the PVT zones implies to consider the whole process and not the two zones separately.

Domaines: Matériaux

Didier Chaussende, Elisabeth Blanquet, Francis Baillet, Magali Ucar, Guy Chichignoud. Thermodynamic aspects of the growth of SiC single crystals using the CF-PVT process. Chemical Vapor Deposition, 2006, 12 (8-9), pp.541-548. ⟨10.1002/cvde.200606471⟩. ⟨hal-00118819⟩