Status of SiC bulk growth process

Didier Chaussende (1) , Peter Wellmann (2) , Michel Pons (3)

1 LMGP - Laboratoire des matériaux et du génie physique
2 FAU - Friedrich-Alexander Universität Erlangen-Nürnberg = University of Erlangen-Nuremberg
3 SIMaP - Science et Ingénierie des Matériaux et Procédés

The present paper gives an overview of the different routes to grow SiC single crystals. The focus is put on the new emerging processes compared with the well established ones. A review of the process engineering modelling is given. Finally, some selected results are pointed out as they should be considered for the future development of SiC material.

Domaines: Matériaux; Génie des procédés

Didier Chaussende, Peter Wellmann, Michel Pons. Status of SiC bulk growth process. Journal of Physics D: Applied Physics, 2007, 20 (20), pp.6150-6158. ⟨10.1088/0022-3727/40/20/S02⟩. ⟨hal-00114194⟩