Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers

Kiril Veselinov (1) , Frédéric Grillot (1) , Patrice Miska (1) , Estelle Homeyer (1) , Philippe Caroff (1) , Charly Platz (1) , Jacky Even (1) , Olivier Dehaese (1) , Slimane Loualiche (1) , Xavier Marie (2) , A. Ramdane (3)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON
2 INSA Toulouse - Institut National des Sciences Appliquées - Toulouse
3 LPN - Laboratoire de photonique et de nanostructures

Quantum dot (QD) lasers exhibit many interesting and useful properties such as low threshold current, temperature insensitivity or chirpless behavior. In order to reach the standards of long-haul optical transmissions, 1.55 μm InAs QD lasers on InP substrate have been developed. Based on time resolved photoluminescence (PL) measurements, carrier dynamics behavior is at first investigated. Electroluminescence (EL) results are then shown at room temperature exhibiting a laser emission centered at 1.61 μm associated to a threshold current density as low as 820 A/cm2 for a six InAs QD stacked layers. Finally, a rate equation model based on the reservoir theory is used to model both time-resolved photoluminescence (TRPL) and electroluminescence results. It is shown that carrier dynamic calculations are in a good agreement with measurements since the saturation effect occurring at high injected power is clearly predicted.

Mots clés: carrier dynamics; quantum dots; rate equation; semiconductor laser

Domaines: Optique / photonique

Kiril Veselinov, Frédéric Grillot, Patrice Miska, Estelle Homeyer, Philippe Caroff, et al.. Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers. Optical and Quantum Electronics, 2006, 38, pp.369-379. ⟨10.1007/s11082-006-0037-2⟩. ⟨hal-00084886⟩