High performance InP-based heterostructure barrier varactors in single and stack configuration

Eric Lheurette (1) , Patrick Mounaix (1) , Patrice Salzenstein (1) , Francis Mollot (1) , Didier Lippens (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Single (SHBV) and dual (DHBV) heterostructure barrier varactors with AlAs/In0.52Al0.48As bolocking conductionlayers have been fabricated and characterized. The devices, whose electrical properties scale with layer complexity, exhibit, for a DHBV scheme, leakage currents as low as 10 A/cm² at 12V, a zero bias capacitance of 1 fF/micro m², and capacitance ratio of 5:1.

Mots clés: Varactors; Semiconductors diodes; III-V semiconductors

Domaines: Autre

Eric Lheurette, Patrick Mounaix, Patrice Salzenstein, Francis Mollot, Didier Lippens. High performance InP-based heterostructure barrier varactors in single and stack configuration. Electronics Letters, 1996, 32, pp.1417-1418. ⟨hal-00076889⟩