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High performance InP-based heterostructure barrier varactors in single and stack configuration

Abstract : Single (SHBV) and dual (DHBV) heterostructure barrier varactors with AlAs/In0.52Al0.48As bolocking conductionlayers have been fabricated and characterized. The devices, whose electrical properties scale with layer complexity, exhibit, for a DHBV scheme, leakage currents as low as 10 A/cm² at 12V, a zero bias capacitance of 1 fF/micro m², and capacitance ratio of 5:1.
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https://hal.archives-ouvertes.fr/hal-00076889
Contributor : Patrice Salzenstein <>
Submitted on : Wednesday, May 31, 2006 - 3:55:04 PM
Last modification on : Monday, March 2, 2020 - 1:38:06 PM
Document(s) archivé(s) le : Friday, November 25, 2016 - 11:04:24 AM

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  • HAL Id : hal-00076889, version 1

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Eric Lheurette, Patrick Mounaix, Patrice Salzenstein, Francis Mollot, Didier Lippens. High performance InP-based heterostructure barrier varactors in single and stack configuration. Electronics Letters, IET, 1996, 32, pp.1417-1418. ⟨hal-00076889⟩

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