Optical gain in porous silicon grains embedded in sol-gel derived SiO2 matrix under femtosecond excitation

K. Luterová (1) , K. Dohnalová (1) , V. Švrcek (1) , Ivan Pelant (1) , Jean-Pierre Likforman (2) , Olivier Crégut (2) , Pierre Gilliot (2) , Bernd Hönerlage (2)

1 Institute of Physics
2 IPCMS - Institut de Physique et Chimie des Matériaux de Strasbourg

Porous silicon grains embedded in the phosphorus doped SiO2 matrix exhibit improved photoluminesce properties and better stability in comparison with native porous silicon samples. We have tested this material for the presence of room temperature optical amplification under femtosecond (100 fs, 395 nm) excitation. Combined variable stripe length and shifted excitation spot experiments reveal positive optical gain, the net modal gain coefficient reaching 25 cm–1 at a pump intensity of 1.1 W/cm2 (mean power). The gain spectrum is broad (full width at half maximum ~130 nm), peaked at ~650 nm, and is slightly blueshifted with regard to the standard photoluminescence emission.

Mots clés: silicium; luminescence

Domaines: Autre [cond-mat.other]

K. Luterová, K. Dohnalová, V. Švrcek, Ivan Pelant, Jean-Pierre Likforman, et al.. Optical gain in porous silicon grains embedded in sol-gel derived SiO2 matrix under femtosecond excitation. Applied Physics Letters, 2004, 84, pp.3280. ⟨10.1063/1.1723692⟩. ⟨hal-00022461⟩