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Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 1996

SEU-hardened storage cell validation using a pulsed laser

Résumé

Laser tests performed on a prototype chip to validate new SEU-hardened storage cell designs revealed unexpected latch-up and single-event upset phenomena. The investigations that identified their location show the existence of a topology-dependent dual node upset mechanism. Design solutions are suggested to avoid its occurrence.
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Dates et versions

hal-00008252 , version 1 (06-09-2005)

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Citer

Raoul Velazco, T. Calin, M. Nicolaidis, S. Moss, S.D. La Lumondiere, et al.. SEU-hardened storage cell validation using a pulsed laser. IEEE Transactions on Nuclear Science, 1996, Dec. 1996; 43(6) pt. 1, pp.2843-8. ⟨10.1109/23.556875⟩. ⟨hal-00008252⟩

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