Built-In Current Sensor for IDDQ Testing in Deep Submicron CMOS

T. Calin (1) , Lorena Anghel (1) , M. Nicolaidis (1, 2)

1 TIMA - Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés
2 IROC TECHNOLOGIES - iROc Technologies

This paper describes results on Built-In Current Sensors destined to overcome the limitations of IDDQ testing in deep submicron circuits. The problems of performance penalty, test accuracy and test speed are addressed. A new sensor composed of a source-controlled comparator operating at low supply voltages and bias currents is used. Gradual sensor activation ensures reliable low noise operation. It is combined with large bypass MOS switches avoiding performance penalty, as well as a second bypass and compensation logic to increase test speed.

Domaines: Micro et nanotechnologies/Microélectronique

T. Calin, Lorena Anghel, M. Nicolaidis. Built-In Current Sensor for IDDQ Testing in Deep Submicron CMOS. 17TH IEEE VLSI Test Symposium, 1999, Dana Point, California, United States. pp.135-42, ⟨10.1109/VTEST.1999.766657⟩. ⟨hal-00005845⟩