Role of the different defects, their population and distribution in the LaAlO3 /SrTiO3 heterostructure's behavior

Abstract : Hetero-interfaces between epitaxial LaAlO3 films and SrTiO3 substrates can exhibit an insulator-metal transition at a critical film thickness above which a quasi-two-dimensional electron gas forms. This work aims to elucidate the significant role the defects play in determining the sources of non-mobile and mobile carriers, the critical thickness, and the dipolar field screening. A model is built based on a comprehensive investigation of the origin of charge carriers and the advanced analysis of structural factors that affect the electronic properties of these hetero-epitaxial interfaces.
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Journal of Applied Physics, American Institute of Physics, 2018, 123 (15), 155304, 5 p. 〈https://aip.scitation.org/doi/abs/10.1063/1.5024554〉. 〈10.1063/1.5024554〉
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Soumis le : mardi 24 avril 2018 - 15:45:27
Dernière modification le : samedi 28 avril 2018 - 01:23:24

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Hicham Zaid, Marie-Hélène Berger, Denis Jalabert, M. Walls, R. Akrobetu, et al.. Role of the different defects, their population and distribution in the LaAlO3 /SrTiO3 heterostructure's behavior. Journal of Applied Physics, American Institute of Physics, 2018, 123 (15), 155304, 5 p. 〈https://aip.scitation.org/doi/abs/10.1063/1.5024554〉. 〈10.1063/1.5024554〉. 〈cea-01775862〉

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