X-ray reflection spectroscopy of the HfO2/SiO2/Si system in the region of the O-K absorption edge

Abstract : The x-ray reflection spectra, i.e. the reflected intensity as a function of the incident photon energy, of the HfO2/SiO2/Si system in the region of the O-K absorption edge are observed for various glancing angles. It is demonstrated that the variation of the glancing angle enables the depth profilometry of the sample. By using the Kramers-Kronig analysis, the reflection spectra are transformed into absorption spectra, from which the local physico-chemical environment of the oxygen atoms can be deduced. Thus we show in a non-destructuve way that the HfO2 amorphous film has a well defined structure with a thin superficial layer presenting defect points or various local atomic structures.
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Contributor : Philippe Jonnard <>
Submitted on : Friday, May 20, 2005 - 4:21:37 PM
Last modification on : Thursday, March 21, 2019 - 1:13:42 PM
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  • HAL Id : hal-00004944, version 1

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E. O. Filatova, Philippe Jonnard, Jean-Michel André. X-ray reflection spectroscopy of the HfO2/SiO2/Si system in the region of the O-K absorption edge. 2005. ⟨hal-00004944⟩

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