Ultrafast InGaAs photoswitch for RF signal processing

R. Horvath (1) , J-F. Roux (1) , J-L. Coutaz (1) , Julien Poette (1) , B. Cabon (1) , C. Graham (2)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 DEEE - Department of Electrical and Electronic Engineering [London]

Optical processing of RF signals is demonstrated in this communication using photoswitches made from Nitrogen Implanted InGaAs. The sampling device shows an ultrafast picosecond response time while activated by ultra-short optical pulses or modulated optical beam centered at the wavelength of 1.55 µm. The optoelectronic device is embedded in a microwave coplanar waveguide which has a high electrical bandwidth allowing to process signals in the 1-67 GHz band. We investigate the potentiality of this component to be used either in photonic assisted sampling for future Analog to Digital Converters or in photonic assisted heterodyne detection of RF modulated carriers. Index Terms-Photoconductive sampling, Ion Implanted InGaAs, ultrafast electronics, metal-semiconductor-metal devices, Radio Over Fiber, photonic assisted data processing, heterodyne photomixer.

Domaines: Optique / photonique

R. Horvath, J-F. Roux, J-L. Coutaz, Julien Poette, B. Cabon, et al.. Ultrafast InGaAs photoswitch for RF signal processing. IEEE International Conference on Optical Network Design and Modeling ONDM, 2017, Budapest, Hungary. ⟨hal-01958016⟩