Cross-section doping topography of 4H-SiC VJFETs by various techniques
Résumé
Different methods for cross-section doping topography of SiC Trenched-singly-implanted vertical junction field effect transistors (TSI-VJFETs) are presented with the purpose to determine the doping distribution in the epitaxial structure and the implanted areas.
Domaines
Electronique
Fichier principal
ICSCRM'17_Manuscript_Cross-section_corrected final.pdf (2.3 Mo)
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