Improved limits on β+EC and ECEC processes in Sn112

A.S. Barabash (1) , P. Hubert (2) , C. Marquet (2) , A. Nachab (2) , S. I. Konovalov (1) , F. Perrot (2) , F. Piquemal (2) , V. Umatov (1)

1 ITEP - Institute of Theoretical and Experimental Physics [Moscow]
2 CENBG - Centre d'Etudes Nucléaires de Bordeaux Gradignan

Limits on β+EC and ECEC processes in Sn112 have been obtained using a 380 cm3 HPGe detector and an external source consisting of 100 g enriched tin (94.32% of Sn112). A limit with 90% C.L. on the Sn112 half-life of 1.3×1021 yr for the ECEC(0ν) transition to the 03+ excited state in Cd112 (1871 keV) has been established. This transition has been discussed in the context of a possible enhancement of the decay rate. The limits on other β+EC and ECEC processes in Sn112 have also been obtained on the level of (0.1-1.6)×1021 yr at the 90% C.L.

Mots clés: Beta decay; double beta decay; electron and muon capture; Neutrino mass and mixing; 90<=A<=149

Domaines: Physique Nucléaire Expérimentale [nucl-ex]

A.S. Barabash, P. Hubert, C. Marquet, A. Nachab, S. I. Konovalov, et al.. Improved limits on β+EC and ECEC processes in Sn112. Physical Review C, 2011, 83, pp.045503. ⟨10.1103/PhysRevC.83.045503⟩. ⟨in2p3-00605516⟩