Charge states and energy loss of 300 MeV/u U$^{73+}$ ions channeled in a silicon crystal

D. Dauvergne (1) , C. Scheidenberger , A. L'Hoir , J-U. Andersen , S. Andriamonje (2) , C. Boeckstiegel , M. Chevallier (3) , C. Cohen , N. Cue , S. Czajkowski (2) , J.S. Forster , H. Geissel , H. Irnich , T. Kandler , R. Kirsch (1) , A. Magel , P.H. Mokler , G. Muenzerberg , F. Nickel , Yu.L. Pivovarov , J.-C. Poizat (1) , M-F. Politis , J. Remillieux (1) , Didier Schmaus , Th. Stoehlker , T. Suzuki , M. Toulemonde

1 IPNL - Institut de Physique Nucléaire de Lyon
2 CENBG - Centre d'Etudes Nucléaires de Bordeaux Gradignan
3 CAS-PHABIO

Domaines: Physique Atomique [physics.atom-ph]

D. Dauvergne, C. Scheidenberger, A. L'Hoir, J-U. Andersen, S. Andriamonje, et al.. Charge states and energy loss of 300 MeV/u U$^{73+}$ ions channeled in a silicon crystal. Physical Review A : Atomic, molecular, and optical physics [1990-2015], 1999, 59, pp.2813-2822. ⟨in2p3-00014351⟩