Influence of Si4+ and Ga3+ doped in the BiSiGaVOx system on the structure and ionic conductivity
Résumé
In the present work, the Si and Ga co-doped the Bi4V2O11 compound, i.e., the Bi4V2-xGax/2Six/2O11-3x/4 system (0.1 ≤ x ≤ 0.9) was studied. Structural analysis by XRD reveals that the ordered α-monoclinic phase is synthesized for x ≤ 0.1. The less ordered β-orthorhombic phase was observed in the compositional range of 0.2 ≤ x ≤ 0.3, while the disordered γ-tetragonal phase was obtained over a wide compositional range of 0.4 ≤ x ≤ 0.8. The conductivity of the solid solution Bi4V2-xGax/2Six/2O11-3x/4, with x = 0.2, is promising at 500°C, reaching 1.1 × 10–1 S.cm−1.