Nano-proximity direct ion beam writing

Gediminas Seniutinas (1, 2) , Gediminas Gervinskas (1, 2) , Jose Anguita (3) , Davit Hakobyan (1, 2, 4) , Etienne Brasselet (4) , Saulius Juodkazis (1, 2)

1 Centre for Micro-Photonics [Hawthorn]
2 MCN - Melbourne Centre for Nanofabrication
3 IMM - Instituto de Microelectronica de Madrid
4 LOMA - Laboratoire Ondes et Matière d'Aquitaine

Focused ion beam (FIB) milling with a 10 nm resolution is used to directly write metallic metasurfaces and micro-optical elements capable to create structured light fields. Surface density of fabricated nano-features, their edge steepness as well as ion implantation extension around the cut line depend on the ion beam intensity profile. The FIB beam intensity cross section was evaluated using atomic force microscopy (AFM) scans of milled line arrays on a thin Pt film. Approximation of two Gaussian intensity distributions describes the actual beam profile composed of central high intensity part and peripheral wings. FIB fabrication reaching aspect ratio of 10 in gold film is demonstrated.

Mots clés: Ga ion beam milling; Nanofabrication; structured light

Domaines: Optique / photonique; Micro et nanotechnologies/Microélectronique

Gediminas Seniutinas, Gediminas Gervinskas, Jose Anguita, Davit Hakobyan, Etienne Brasselet, et al.. Nano-proximity direct ion beam writing. Nanofabrication, 2015, 2 (1), pp.54-62. ⟨10.1515/nanofab-2015-0006⟩. ⟨hal-01407042⟩