Optimization of electronic domain-wall properties by aliovalent cation substitution

Jakob Schaab (1) , Andrés Cano (2) , Martin Lilienblum (1) , Zewu Yan (3) , Edith Bourret (3) , Dennis Meier (1) , Ramamoorthy Ramesh (4) , Manfred Fiebig (1)

1 D-MATL - Department of Materials [ETH Zürich]
2 ICMCB - Institut de Chimie de la Matière Condensée de Bordeaux
3 Materials Science Division [LBNL Berkeley]
4 Department of Materials Science and Engineering [Berkeley]

Electronic domain-wall conductance is controlled by chemical aliovalent doping in the p-type semiconductor Er1-xCaxMnO3. Coexisting bound (top panel) and mobile (lower panel) charges at the walls are analyzed using electrostatic force micro­scopy. Emergent doping-related variations are quantified by local transport measurements and explained based on phenomenological theories.

Domaines: Matériaux

Jakob Schaab, Andrés Cano, Martin Lilienblum, Zewu Yan, Edith Bourret, et al.. Optimization of electronic domain-wall properties by aliovalent cation substitution. Advanced Electronic Materials, 2016, 2 (1), 1500195 (5 p.). ⟨10.1002/aelm.201500195⟩. ⟨hal-01316749⟩