Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400 °C

Jean-Luc Battaglia (1) , Andrzej Kusiak (1) , Vincent Schick (1) , Andrea Cappella (1) , Claudia Wiemer (2) , Massimo Longo (2) , Enrico Varesi (3)

1 I2M - Institut de Mécanique et d'Ingénierie de Bordeaux
2 IMM - Istituto per la Microelettronica e Microsistemi [Catania]
3 R&D Technology Development [Numonyx]

The thermal conductivity of Ge2Sb2Te5 (GST) layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO2, was measured using a photothermal radiometry experiment. The two phase changes in the Ge2Sb2Te5 were retrieved, starting from the amorphous and sweeping to the face centered cubic (fcc) crystalline state at 130 °C and then to the hexagonal crystalline phase (hcp) at 310 °C. The thermal conductivity resulted to be constant in the amorphous phase, whereas it evolved between the two crystalline states. The thermal boundary resistance at the GST-SiO2 interface was estimated to be higher for the hcp phase than for the amorphous and fcc ones.

Domaines: Thermique [physics.class-ph]; Thermique [physics.class-ph]; Physique Classique [physics.class-ph]

Jean-Luc Battaglia, Andrzej Kusiak, Vincent Schick, Andrea Cappella, Claudia Wiemer, et al.. Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400 °C. British Journal of Applied Physics, 2010, 107 (4), pp.doi:10.1063/1.3284084. ⟨10.1063/1.3284084⟩. ⟨hal-00740147⟩